CMP 2001 Version 1 is composed of two parts: A PreProcessor, helping the user to input parameters related to equipment design, consumables (abrasive size distribution, abrasive geometry, slurry chemicals, pad materials and pad topography) and wafer parameters including wafer size, wafer curvature, wafer materials and pattern density, and A Postprocessor, doing the simulation and outputting important CMP parameters including MRR, WIWNU and WIDNU. 

The PreProcessor is composed three parts: Machine Setup, Consumable Setup and Wafer Setup. 

I. Preprocessor--- Machine Setup

The Machine Setup is to help to user to input parameters related to machine design, including

1. Polishing Head Size (2inch- 12inch)

2. Polishing Platen Size

3. Offset between Polishing Head Center and Polishing Platen Center

4. Retaining Ring Width (0 to 6mm)

5. Down Pressure (0 to 20psi)

6. Rotational Velocity of Polishing Head (-100 rpm to 100 rpm)

7. Rotational Velocity of Polishing Platen (-100 rpm to 100 rpm)

8. Press Applied on Retaining Ring (0 to down pressure)

1-3 and 6-7 basically determine the velocity distribution over wafer-pad interface.

1-2, 4-5 and 8 basically determine the pressure distribution over wafer-pad interface.

4 and 8 can be adjusted to reduce the edge effects.

The following is the graphic interface of the Preprocessor- Machine Setup. (The reader can scroll the window to the Postprocessor part to see the pressure distribution and velocity distribution prediction based on the input parameters)

 

II. Preprocessor--- Consumable Setup

This part is to help the user to input parameters related to consumables, including

1. Abrasive Weight Concentration

2. Abrasive Average Size

3. Abrasive Size Standard Deviation

4. Polishing Pad Hardness

5. Polishing Pad Young's Modulus

6. Polishing Pad Topography Parameters

The above parameters determine the sensitivity of material removal rate on pressure distribution. Reduce this sensitivity can reduce the non-uniformity in both wafer-scale and die-scale. The following is the graphic interfaces of consumable setup. The readers can scroll the window to the postprocessor to see the effects of consumables on the pressure dependency of material removal rate.

Input Parameters related to Polishing Slurry:

Input Parameters Related to Polishing Pad Material and Topography:

 

II. Preprocessor--- Wafer Setup

This part is to help to user to input parameters related to wafer, including

1. Wafer Size

2. Wafer Material

3. Wafer Curvature

4. Pattern Density

1, 3 are related to interfacial pressure distribution and WIWNU.

4 is related to WIDNU.

II. Postprocessor--- Wafer Scale Pressure Distribution

1. Pressure Distribution Under Different Retaining Ring Width and Wafer Sizes

 

 

 

 

 

 

2. Velocity Distribution

2. Different Down Pressure Dependency of MRR under Different Consumable Combinations

 

 

 

4. WIWNU Prediction

 

5. WIDNU Prediction

 

 

by Jianfeng Luo (http://www.me.berkeley.edu/~jianfeng/)