Wafer-Scale Modeling of Chemical Mechanical Polishing (CMP) Process  

 Jianfeng Luo and Yongsik Moon

Sponsored By: NSF

Abstract 

Chemical mechanical polishing (CMP) process is of growing interest in semiconductor industry with the increasing complexity of device design and the emergence of sub-micron device geometry. In spite of its extensive use, many aspects of CMP are not well understood and wafer-scale modeling is needed for CMP. The basis for the wafer-scale CMP model is the Preston’s equation. In this report, physical-based model using the finite element method (FEM)/the boundary element method (BEM) is presented to evaluate the pressure function in the Preston’s equation. Previous work shows that a solid model may be used to calculate the normal pressure distribution over the wafer-pad interface. In this report, it is also shown that semi-experimental model is a good choice for evaluating the Preston coefficient C. In the future work, the physical-based and semi-experimental model will be integrated together to evaluate the material removal rate, within-wafer non-uniformity and wafer-wafer non-uniformity.  

 

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