Study of Slurry Chemical Influence in Ductile/Brittle Transition Depth in Chemical Mechanical Polishing (CMP) Using Acoustic Emission Sensor 

 Yongsik Moon and Yoon Lee 

Sponsored By: NSF / UC-SMART 

Abstract 

Ductile/Brittle transition depth of silicon wafer is extended by chemical treatment using CMP slurry. The transition is identified by using acoustic emission (AE) feedback. The material property change (from brittle to ductile) of the wafer surface is believed to be the main cause of the transition depth change and of the scratch/defect-free surface after CMP.  

 

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