The Effect of Slurry Film Thickness Variation in CMP 

 Yongsik Moon  

Sponsored By: NSF / UC-SMART 

Abstract 

In this research, it is shown that the CMP performance (material removal rate, planarization, surface roughness and defect density, etc.) is significantly determined by the slurry film thickness between the silicon wafer and the polishing pad. The slurry film thickness depends on velocity and Hersey number.  

 

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