Process Modeling of Chemical Mechanical Polishing (CMP) 

  Jianfeng Luo 

Sponsored By: NSF and UC SMART 

Abstract 

In this report, the modeling process of CMP process based on prediction of material removal rate (MRR) and pressure and velocity distribution over wafer-pad interface is discussed. Software to predict MRR and with-in wafer non-uniformity (WIWNU) is being developed.  

 

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