Andrew Chang
Sponsored
By: National Science Foundation (DMI-9813039)
Abstract
Material removal and step height reduction (SHR) of patterned oxide wafers from Chemical
Mechanical Polishing (CMP) are significantly influenced by the wafer-pad contact mode
determined by the slurry film thickness between the wafer and the polishing pad. The
slurry film thickness is proportional to the Hersey number defined as relative velocity
of wafer times slurry viscosity divided by normal pressure on the wafer. In the low
Hersey number regime, patterned oxide wafers have high material removal and SHR and in
the high Hersey number regime, they have lower material removal and SHR. It is believed
that this phenomena results from the wafer-pad contact modes determined by the increasing
slurry film thickness. It is also found that the SHR decreases with increasing pattern
density of each die.
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