David Dornfeld
Sponsored
By: UC SMART
Abstract
CMP has
become a leading planarization technique in the manufacture of advanced integrated
circuits (IC) chips and is one of the key fabrication processes. The shrinking feature
size, introduction of new materials and impressive requirements for surface planarity and
quality push the limits of the process. There is still a need to better understand the
physics of CMP from the mechanical as well as chemical point of view. This paper reviews
research work at Berkeley on mechanical elements of CMP and the development of a
comprehensive model integrating both mechanical and chemical effects in CMP with the goal
of predicting feature pattern evolution, design of optimal process recipes and help to
understand the CMP-imposed limits on the reproducibility of deep sub-micron features.
Research on sensors for process monitoring, process behavior from a hydrodynamic
viewpoint, synergy between chemical and mechanical removal, step height reduction and an
architecture for an integrated model including abrasive size and characteristic will be
reviewed.
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