Investigation of Material Removal Mechanisms in Oxide CMP by Scratch Test  

  Edward Hwang 

Sponsored By: UC SMART 

Abstract 

At present, the material removal mechanism taking place on a wafer surface during CMP is not well understood. In order to make a breakthrough in the CMP area, fundamentals of material removal mechanism must be better understood. As a part of this, a scratch test was introduced. In this paper, using a scratch test, some characteristics of CMP treated wafer surfaces were studied.  

 

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